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Micron has confirmed the shipment of its industry-fastest 11 Gbps HBM4 DRAM to customers, and is collaborating with TSMC for next-gen HBM4E.
Micron Says It Has Outperformed the Competition with Its 11 Gbps HBM4 Memory, Will Partner with TSMC for HBM4E DRAM
During its latest earnings call for Q4 and FY2025, Micron announced key developments in its DRAM and NAND Flash segments. The company reported a revenue of $11.32 billion, up from $9.30 billion in the previous quarter, with full-year revenue growing to $37.38 billion from $25.11 billion. Looking ahead, Micron is focusing on expanding its performance with next-gen solutions.
Starting with HBM, Micron said that its HBM4 12-Hi DRAM solution remains on track. To address increased performance requirements, the company has produced and shipped the first samples of its fastest HBM4 solution to date, offering over 11 Gbps pin speeds and 2.8 TB/s bandwidth. They claim this new HBM4 product will outperform all competitors in terms of performance and efficiency.
We are pleased to note that our HBM share is on track to grow again and be in line with our overall DRAM share in this calendar Q3, delivering on our target that we have discussed for several quarters now. Micron Technology’s HBM4 12-hi remains on track to support customer platform ramps, even as the performance requirements for HBM4 bandwidth and pin speeds have increased.
We have recently shipped customer samples of our HBM4 with industry-leading bandwidth exceeding 2.8 TB/s and pin speeds over 11 Gbps. We believe Micron Technology’s HBM4 outperforms all competing HBM4 products, delivering industry-leading performance as well as best-in-class power efficiency. Our proven 1-gamma DRAM, innovative and power-efficient HBM4 design, in-house advanced CMOS base die, and advanced packaging innovations are key differentiators enabling this best-in-class product.
Sanjay Mehrotra – Micron President & CEO
Besides HBM4, the company also discussed the next-gen HBM4E memory. Unlike HBM, which is based on an in-house and advanced CMOS base die, Micron will partner with TSMC for manufacturing the base logic die for HBM4E memory. This partnership applies to both standard and custom variants. Micron expects HBM4E to be a 2027 product.
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For HBM4E, Micron Technology will offer standard products as well as the option for customization of the base logic die. We are partnering with TSMC for manufacturing the HBM4E base logic die for both standard and customized products. Customization requires close collaboration with customers, and we expect HBM4E with customized base logic dies to deliver higher gross margins than standard HBM4E. Our HBM customer base has expanded and now includes six customers.
We have pricing agreements with almost all customers for a vast majority of our HBM3E supply in calendar 2026. We are in active discussions with customers on the specifications and volumes for HBM4, and we expect to conclude agreements to sell out the remainder of our total HBM calendar 2026 supply in the coming months.
Sanjay Mehrotra – Micron President & CEO
Micron also announced that they have closely collaborated with NVIDIA for the adoption of LPDDR memory for servers, making them the sole supplier of LPDDR DRAM in the data center segment. They also discussed GDDR7 memory for AI and client products, which is expected to exceed 40 Gbps pin speeds in future iterations and products.
And finally, there are developments on Micron’s 1γ DRAM node, which has reached mature yields in record time—50% faster than the prior generation. The G9 NAND production ramp is also moving well, with Micron stating that their G9 NAND node will support both TLC and QLC NAND flash solutions. The company is first to market with PCIe Gen6 SSDs for data centers and should continue to offer more solutions with 16Gb 1γ DRAM.
