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SK hynix has taken Samsung’s recent moves with 1c DRAM seriously, as it plans to be the first to adopt six EUV layers for this technology. The use of EUV (Extreme Ultraviolet Lithography) is complex because its 13.5-nm wavelength targets intricate circuitry, enabling finer feature printing with fewer multi-patterning steps. Traditionally, DRAM had a mix of EUV and Deep Ultra Violet (DUV) layers, but now SK hynix aims to switch entirely to six EUV layers for 1c DRAM.
This shift will enhance product yields, performance, and profitability. Currently, 1c DRAM is not used in conventional consumer memory solutions, but SK hynix is exploring its potential, particularly with DDR5 RAM, which could feature larger capacities. The manufacturer’s commitment to EUV is a long-term strategy, as it plans to integrate this technology into next-gen products like 1d and 0a DRAM. This will ultimately allow the firm to incorporate High-NA EUV, which SK hynix is currently working on.
EUV integration enables SK hynix to produce denser, faster, more power-efficient DDR5 memory and higher-capacity HBM stacks with improved yield figures. With 1c DRAM expected to dominate in HBM4, significant performance improvements can be anticipated in the future.
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According to the passage, why is SK hynix planning to adopt six EUV layers for 1c DRAM technology?
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